The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 06, 2024
Filed:
Dec. 08, 2021
Applicant:
Kabushiki Kaisha Toshiba, Tokyo, JP;
Inventors:
Tatsuo Shimizu, Shinagawa, JP;
Masahiko Kuraguchi, Yokohama, JP;
Toshiya Yonehara, Kawasaki, JP;
Akira Mukai, Kawasaki, JP;
Assignee:
Kabushiki Kaisha Toshiba, Tokyo, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/00 (2006.01); H01L 29/778 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01); H01L 29/205 (2006.01); H01L 21/3065 (2006.01); H01L 29/20 (2006.01); H01L 21/223 (2006.01); H01L 29/207 (2006.01); H01L 29/51 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7786 (2013.01); H01L 21/2233 (2013.01); H01L 21/2236 (2013.01); H01L 21/3065 (2013.01); H01L 29/2003 (2013.01); H01L 29/205 (2013.01); H01L 29/207 (2013.01); H01L 29/4236 (2013.01); H01L 29/513 (2013.01); H01L 29/66462 (2013.01);
Abstract
A semiconductor device according to an embodiment includes a nitride semiconductor layer; an insulating layer; a first region disposed between the nitride semiconductor layer and the insulating layer and containing at least one element of hydrogen and deuterium; and a second region disposed in the nitride semiconductor layer, adjacent to the first region, and containing fluorine.