The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 06, 2024

Filed:

Mar. 17, 2021
Applicant:

Boe Technology Group Co., Ltd., Beijing, CN;

Inventors:

Jiangbo Chen, Beijing, CN;

Fanli Meng, Beijing, CN;

Fan Li, Beijing, CN;

Shuo Zhang, Beijing, CN;

Da Li, Beijing, CN;

Zeyuan Li, Beijing, CN;

Yanzhao Li, Beijing, CN;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/144 (2006.01); H01L 21/02 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1443 (2013.01); H01L 21/0217 (2013.01); H01L 21/02274 (2013.01); H01L 21/02488 (2013.01); H01L 21/02565 (2013.01); H01L 21/02631 (2013.01); H01L 29/66969 (2013.01);
Abstract

A photodetector, includes a photosensitive layer, a thin film transistor, and a sensing electrode, the sensing electrode connected to one of source/drain electrodes of the thin film transistor to transmit a signal generated by the photosensitive layer to the thin film transistor; wherein the photodetector further is a hydrogen barrier layer which is disposed between the photosensitive layer and the thin film transistor and is configured to inhibit hydrogen of the photosensitive layer from entering the thin film transistor. A method of manufacturing a photodetector is further provided.


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