The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 06, 2024

Filed:

Jul. 28, 2022
Applicant:

Lg Display Co., Ltd., Seoul, KR;

Inventors:

Ki-Tae Kim, Seoul, KR;

So-Young Noh, Goyang-si, KR;

Ui-Jin Chung, Goyang-si, KR;

Kyeong-Ju Moon, Paju-si, KR;

Hyuk Ji, Paju-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/12 (2006.01); H01L 27/15 (2006.01); H01L 33/62 (2010.01); H01L 29/786 (2006.01); H01L 33/54 (2010.01); H01L 29/49 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1214 (2013.01); H01L 27/1225 (2013.01); H01L 27/156 (2013.01); H01L 29/4908 (2013.01); H01L 29/7869 (2013.01); H01L 29/78606 (2013.01); H01L 29/78696 (2013.01); H01L 33/54 (2013.01); H01L 33/62 (2013.01);
Abstract

A display apparatus can include a driving circuit on a device substrate, the driving circuit including a first thin film transistor and a second thin film transistor, a first insulating layer on the first thin film transistor and the second thin film transistor of the driving circuit, a second insulating layer on the first insulating layer, and a light-emitting device on the second insulating layer, the light-emitting device being electrically connected to the second thin film transistor of the driving circuit. Each of the first thin film transistor and the second thin film transistor includes an oxide semiconductor pattern and a gate electrode overlapping a portion of the oxide semiconductor pattern. The gate electrode has a stacked structure of a first hydrogen barrier layer and a low-resistance electrode.


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