The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 06, 2024

Filed:

Mar. 29, 2021
Applicant:

Murata Manufacturing Co., Ltd., Kyoto-fu, JP;

Inventors:

Shaojun Ma, Nagaokakyo, JP;

Yasunari Umemoto, Nagaokakyo, JP;

Kenji Sasaki, Nagaokakyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/06 (2006.01); H01L 49/02 (2006.01); H01L 29/205 (2006.01); H01L 29/737 (2006.01); H01L 23/66 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0658 (2013.01); H01L 23/66 (2013.01); H01L 28/20 (2013.01); H01L 28/60 (2013.01); H01L 29/205 (2013.01); H01L 29/7371 (2013.01); H03F 2200/451 (2013.01);
Abstract

Multiple bipolar transistors are disposed side by side in the first direction on a substrate. Multiple first capacitance devices are provided corresponding to the respective base electrodes of the bipolar transistors. A radio frequency signal is supplied to the bipolar transistors through the first capacitance devices. Resistive devices are provided corresponding to the respective base electrodes of the bipolar transistors. A base bias is supplied to the bipolar transistors through the resistive devices. The first capacitance devices are disposed on the same side relative to the second direction orthogonal to the first direction, when viewed from the bipolar transistors. At least one of the first capacitance devices is disposed so as to overlap another first capacitance device partially when viewed in the second direction from the bipolar transistors.


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