The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 06, 2024
Filed:
Jan. 11, 2022
Applicant:
Ablic Inc., Tokyo, JP;
Inventor:
Hiroaki Takasu, Tokyo, JP;
Assignee:
ABLIC Inc., Nagano, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/02 (2006.01); H01L 29/417 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0266 (2013.01); H01L 29/41775 (2013.01);
Abstract
A semiconductor device has an off transistor () in which a gate electrode () and a source region () of an N-type MOS transistor are connected to a ground terminal and a drain region () is connected to an external signal terminal (). In the off transistor (), the gate electrode () is extensively provided over a portion or entirety of the drain region () in addition to a channel region. A capacitance (C) formed between the gate electrode () and the drain region () may be greater than a capacitance (C) generated between the gate electrode () and a ground potential.