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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11894291 B1

PDFFull Text
Date of Patent:
Feb. 06, 2024

Filed:

Feb. 23, 2021

Manufacturing method of semiconductor device and semiconductor device

Applicant:

Mitsubishi Electric Corporation, Tokyo, JP;

Inventors:

Shuhei Yokoyama, Tokyo, JP;

Shogo Shibata, Tokyo, JP;

Hiroyuki Nakamura, Tokyo, JP;

Assignee:

Mitsubishi Electric Corporation, Tokyo, JP;

Attorney:

Studebaker & Brackett PC

Primary Examiner:

Marc Anthony Armand

Int. Cl.
CPC ...
H01L 23/495 (2006.01); H01L 23/00 (2006.01); H01L 23/31 (2006.01); H01L 21/48 (2006.01); H01L 21/56 (2006.01);
U.S. Cl.
CPC ...
H01L 23/49555 (2013.01); H01L 21/4825 (2013.01); H01L 21/4842 (2013.01); H01L 21/565 (2013.01); H01L 23/3107 (2013.01); H01L 23/4952 (2013.01); H01L 23/49537 (2013.01); H01L 23/49575 (2013.01); H01L 24/85 (2013.01); H01L 2224/8592 (2013.01); H01L 2924/1203 (2013.01); H01L 2924/14 (2013.01);
Abstract

A manufacturing method of a semiconductor device according to the technology disclosed in the present specification includes: providing at least one semiconductor element; connecting, to the semiconductor element, a plurality of first terminals and at least one second terminal that is a control terminal to which a voltage lower than that of the first terminal is applied; and forming a first bent part in the first terminal, in which the first bent part does not protrude on the surfaces, facing each other, of the plurality of first terminals that are adjacent to each other.

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Yokoyama, Shuhei. (2024). Manufacturing method of semiconductor device and semiconductor device (U.S. Patent No. 11894291). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11894291

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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