The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 06, 2024

Filed:

Jul. 23, 2021
Applicant:

Comadur S.a., Le Locle, CH;

Inventors:

Alexis Boulmay, Morteau, FR;

Pierry Vuille, Les Emibois, CH;

Julien Meier, Neuchatel, CH;

Pierpasquale Tortora, Neuchatel, CH;

Assignee:

Comadur S.A., Le Locle, CH;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01J 37/305 (2006.01); G04B 19/06 (2006.01); G04B 29/02 (2006.01); G04B 37/00 (2006.01); G04B 39/00 (2006.01); H01J 37/08 (2006.01);
U.S. Cl.
CPC ...
H01J 37/3053 (2013.01); G04B 19/06 (2013.01); G04B 29/022 (2013.01); G04B 37/0008 (2013.01); G04B 39/002 (2013.01); H01J 37/08 (2013.01); H01J 2237/08 (2013.01);
Abstract

A method for structuring a decorative or technical pattern in the thickness of an object made of an at least partially transparent amorphous, semi-crystalline or crystalline material, wherein the object is made of an at least partially transparent material including a top surface and a bottom surface which extends away from the top surface. The top or bottom surfaces is provided with a mask defining an opening whose outline corresponds to the profile of the pattern to be structured, the mask covering the top or bottom surface at the positions which are not to be structured. The pattern is structured with a mono- or multicharged ion beam through the opening of the mask, wherein the mechanical properties of the mask are sufficient to prevent the ions of the ion beam from etching the top or bottom surface at the positions where this top or bottom surface is covered by the mask.


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