The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 06, 2024

Filed:

Mar. 02, 2022
Applicant:

Sandisk Technologies Llc, Addison, TX (US);

Inventors:

Yu-Chung Lien, San Jose, CA (US);

Xue Bai Pitner, Sunnyvale, CA (US);

Ken Oowada, Fujisawa, JP;

Assignee:

SANDISK TECHNOLOGIES LLC, Addison, TX (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/34 (2006.01); G11C 16/10 (2006.01); G11C 16/04 (2006.01); G11C 16/08 (2006.01); G11C 16/26 (2006.01);
U.S. Cl.
CPC ...
G11C 16/3495 (2013.01); G11C 16/0433 (2013.01); G11C 16/08 (2013.01); G11C 16/102 (2013.01); G11C 16/26 (2013.01);
Abstract

A method for programming a target memory cell of a memory array of a non-volatile memory system, the method comprises determining a total number of erase/programming (EP) cycles that were applied previously to the memory cell and, (1) if the determined total number of cycles does not exceed a threshold value, applying an asymmetric programming scheme, and, (2) if the determined total number of cycles exceeds the threshold value, applying a symmetric programming scheme. Further, a magnitude of a boosting voltage bias (VPASS) that is to be applied to an unselected word line may be determined according to the determined total number of erase/programming (EP) cycles.


Find Patent Forward Citations

Loading…