The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 06, 2024
Filed:
Jul. 20, 2018
Applicant:
Lg Chem, Ltd., Seoul, KR;
Inventors:
Jinyoung Park, Daejeon, KR;
Cheolmin Yun, Daejeon, KR;
Kyunghwan Kim, Daejeon, KR;
Danbi Choi, Daejeon, KR;
Assignee:
LG CHEM, LTD., Seoul, KR;
Primary Examiner:
Int. Cl.
CPC ...
C08G 73/10 (2006.01); C08J 5/18 (2006.01);
U.S. Cl.
CPC ...
C08G 73/1067 (2013.01); C08G 73/1032 (2013.01); C08G 73/1039 (2013.01); C08G 73/1042 (2013.01); C08J 5/18 (2013.01); C08J 2379/08 (2013.01);
Abstract
The present invention relates to a polyimide film showing a low stress change rate on a silicon wafer. The present invention can minimize cracks which are formed due to the stress change of polyimide, in a process for depositing an inorganic film on a polyimide substrate at a high temperature, and thus can reduce electrical property degradation such as a recoverable residual image and decrease in current of a flexible display.