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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11889711 B1

PDFFull Text
Date of Patent:
Jan. 30, 2024

Filed:

Jan. 21, 2021

Light-emitting element, light-emitting device, electronic device, and lighting device

Applicant:

Semiconductor Energy Laboratory Co., Ltd., Atsugi, JP;

Inventors:

Hiromi Nowatari, Atsugi, JP;

Satoshi Seo, Kawasaki, JP;

Nobuharu Ohsawa, Zama, JP;

Takahiro Ushikubo, Atsugi, JP;

Tetsuo Tsutsui, Kasuga, JP;

Assignee:

Semiconductor Energy Laboratory Co., Ltd., Atsugi, JP;

Attorneys:

Eric J. Robinson

Robinson Intellectual Property Law Office, P.C.

Primary Examiner:

Ali Naraghi

Int. Cl.
CPC ...
B32B 15/01 (2006.01); H10K 50/13 (2023.01); B82Y 10/00 (2011.01); H10K 50/11 (2023.01); H10K 50/19 (2023.01); H10K 85/20 (2023.01); H10K 85/30 (2023.01); H10K 85/60 (2023.01); H10K 101/40 (2023.01);
U.S. Cl.
CPC ...
H10K 50/13 (2023.02); B82Y 10/00 (2013.01); H10K 50/11 (2023.02); H10K 50/131 (2023.02); H10K 50/19 (2023.02); H10K 85/221 (2023.02); H10K 85/324 (2023.02); H10K 85/615 (2023.02); H10K 85/621 (2023.02); H10K 85/626 (2023.02); H10K 85/633 (2023.02); H10K 85/636 (2023.02); H10K 85/6572 (2023.02); H10K 2101/40 (2023.02);
Abstract

An object is to provide a light-emitting element capable of emitting light with a high luminance even at a low voltage, and having a long lifetime. The light-emitting element includes n EL layers between an anode and a cathode (n is a natural number of two or more), and also includes, between m-th EL layer from the anode and (m+1)-th EL layer (m is a natural number, 1≤m≤n−1), a first layer including a first donor material in contact with the m-th EL layer, a second layer including an electron-transport material and a second donor material in contact with the first layer, and a third layer including a hole-transport material and an acceptor material in contact with the second layer and the (m+1)-th EL layer.

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