Semiconductor device including dummy channels and through wiring structure

Abstract

A semiconductor device includes a peripheral circuit region including a first substrate and circuit devices on the first substrate, a memory cell region including a second substrate on the first substrate, a horizontal conductive layer on the second substrate, gate electrodes stacked on the horizontal conductive layer in a first direction perpendicular to an upper surface of the second substrate and spaced apart from each other, and channel structures extending in gate electrodes in the first direction, each of the channel structures including a channel layer in physical contact with the horizontal conductive layer, and a through wiring region including a through contact plug extending in the first direction and electrically connecting the memory cell region to the peripheral circuit region, an insulating region bordering the through contact plug, and dummy channel structures partially extending into the insulating region in the first direction.