The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11889689 B1

Date of Patent:

Jan. 30, 2024

Filed:

Mar. 16, 2021

Semiconductor memory device

Applicant:

Kioxia Corporation, Tokyo, JP;

Inventors:

Satoshi Nagashima, Yokkaichi Mie, JP;

Fumitaka Arai, Yokkaichi Mie, JP;

Assignee:

Kioxia Corporation, Tokyo, JP;

Attorney:

Foley & Lardner LLP

Primary Examiner:

Eric A Ward

Assistant Examiner:

Zachary Taylor Nix

Int. Cl.

CPC ...

H10B 43/10 (2023.01); H01L 23/528 (2006.01); H10B 41/10 (2023.01); H10B 41/27 (2023.01); H10B 43/27 (2023.01);

U.S. Cl.

CPC ...

H10B 43/10 (2023.02); H01L 23/528 (2013.01); H10B 41/10 (2023.02); H10B 41/27 (2023.02); H10B 43/27 (2023.02);

Abstract

According to one embodiment, a semiconductor memory device includes a first conductive layer, a second conductive layer, and at least one memory structure. The first conductive layer includes a first portion, a second portion, and a third portion, a fourth portion, and a fifth portion. The first portion is provided between the second portion and the third portion in a second direction. The second conductive layer includes a sixth portion, a seventh portion, and an eighth portion, a ninth portion, and a tenth portion. The sixth portion is provided between the seventh portion and the eighth portion in the second direction. The second portion is provided between the sixth portion and the eighth portion in the second direction.

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