The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 30, 2024

Filed:

Sep. 17, 2021
Applicant:

Raytheon Company, Waltham, MA (US);

Inventor:

Krishna Shivaram, Torrance, CA (US);

Assignee:

Raytheon Company, Tewksbury, MA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H03K 17/14 (2006.01); H03K 17/082 (2006.01); H03K 17/08 (2006.01);
U.S. Cl.
CPC ...
H03K 17/145 (2013.01); H03K 17/0822 (2013.01); H03K 2017/0806 (2013.01);
Abstract

An apparatus includes a current-based temperature compensation circuit having a reference buffer, a biasing current mirror, and a controller. The reference buffer is configured to receive a biasing reference voltage at a voltage input terminal and replicate the biasing reference voltage to first and second buffer terminals. At least one of the first and second buffer terminals is configured to be electrically connected to at least one gate terminal of an analog complementary metal oxide semiconductor (CMOS) physically unclonable function (PUF) cell. The biasing current mirror is configured to receive a reference current at a current input terminal and replicate the reference current to the first buffer terminal. The controller is configured to compensate an output of the CMOS PUF cell for temperature variation based on a weighted sum of a bandgap current, a current proportional to absolute temperature, and a current complementary to absolute temperature.


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