The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 30, 2024
Filed:
Feb. 24, 2021
Murata Manufacturing Co., Ltd., Nagaokakyo, JP;
Ryo Nakagawa, Nagaokakyo, JP;
Hideki Iwamoto, Nagaokakyo, JP;
MURATA MANUFACTURING CO., LTD., Kyoto, JP;
Abstract
An acoustic wave device includes a silicon oxide film, a lithium tantalate film, an IDT electrode, and a protection film that are laminated on a support substrate made of silicon. A wavelength normalized film thickness of a lithium tantalate film is denoted by T, an Euler angle is θ, a wavelength normalized film thickness of the silicon oxide film is T, a wavelength normalized film thickness of the IDT electrode in terms of aluminum thickness is T, a wavelength normalized film thickness of a protection film is T, a propagation direction in the support substrate is ψ, and a wavelength normalized film thickness of the support substrate is T. Values of T, θ, T, T, T, and ψare set such that Icorresponding to an intensity of a response of a spurious response represented by Formula (1) is greater than about −2.4 in a spurious response.