The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 30, 2024

Filed:

Apr. 27, 2020
Applicant:

Semiconductor Energy Laboratory Co., Ltd., Atsugi, JP;

Inventors:

Kiyotaka Kimura, Kanagawa, JP;

Takeya Hirose, Kanagawa, JP;

Hidetomo Kobayashi, Kanagawa, JP;

Takayuki Ikeda, Kanagawa, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03D 7/14 (2006.01); H03D 7/12 (2006.01); H01L 27/12 (2006.01); H01L 29/786 (2006.01); H10B 12/00 (2023.01);
U.S. Cl.
CPC ...
H03D 7/12 (2013.01); H01L 27/1207 (2013.01); H01L 27/1225 (2013.01); H01L 27/1255 (2013.01); H01L 29/7869 (2013.01); H01L 29/78648 (2013.01); H10B 12/00 (2023.02);
Abstract

A semiconductor device with a novel structure is provided. The semiconductor device includes a mixer circuit including a digital-analog converter circuit, a control circuit for controlling the digital-analog converter circuit, a power source control switch, and a plurality of Gilbert circuits. The plurality of Gilbert circuits each include an analog potential holding circuit for holding an analog potential output from the digital-analog converter circuit. The control circuit has a function of outputting a signal for controlling the analog potential holding circuit and the digital-analog converter circuit. The power source control switch has a function of stopping supply of a power source voltage to the control circuit in a period during which the analog potential held in the analog potential holding circuit is not updated. The analog potential holding circuit includes a first transistor. The first transistor includes a semiconductor layer including an oxide semiconductor in a channel formation region.


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