The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 30, 2024

Filed:

Aug. 23, 2021
Applicant:

Xiamen Sanan Optoelectronics Technology Co., Ltd., Xiamen, CN;

Inventors:

Anhe He, Xiamen, CN;

Su-hui Lin, Xiamen, CN;

Jiansen Zheng, Xiamen, CN;

Kangwei Peng, Xiamen, CN;

Xiaoxiong Lin, Xiamen, CN;

Chen-ke Hsu, Xiamen, CN;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/46 (2010.01); H01L 33/20 (2010.01); H01L 33/38 (2010.01); H01L 33/44 (2010.01); H01L 33/40 (2010.01);
U.S. Cl.
CPC ...
H01L 33/46 (2013.01); H01L 33/20 (2013.01); H01L 33/38 (2013.01); H01L 33/44 (2013.01); H01L 33/405 (2013.01); H01L 2933/0016 (2013.01); H01L 2933/0025 (2013.01);
Abstract

A flip-chip light emitting diode (LED) includes: a sapphire substrate having an edge; an epitaxial layer over the substrate, wherein the epitaxial layer comprises: a first semiconductor layer, a second semiconductor layer, and a light emitting layer between the first semiconductor layer and the second semiconductor layer, wherein the epitaxial layer is divided into an epitaxial bulk layer and a barrier structure; and an insulating layer over the epitaxial bulk layer, wherein a portion of the insulating layer that covers a sidewall of the epitaxial bulk layer is separated from the edge of the substrate by the barrier structure.


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