The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 30, 2024
Filed:
Dec. 12, 2019
Dowa Electronics Materials Co., Ltd., Tokyo, JP;
Yuta Koshika, Akita, JP;
Yoshitaka Kadowaki, Akita, JP;
DOWA Electronics Materials Co., Ltd., Tokyo, JP;
Abstract
Provided is a semiconductor light-emitting element having improved light emission output. The semiconductor light-emitting element includes a light-emitting layer having a layered structure in which a first III-V compound semiconductor layer and a second III-V compound semiconductor layer having different composition ratios are repeatedly stacked. The first and second III-V compound semiconductor layers each contain three or more types of elements that are selected from Al, Ga, and In and from As, Sb, and P. The composition wavelength difference between the composition wavelength of the first III-V compound semiconductor layer and the composition wavelength of the second III-V compound semiconductor layer is 50 nm or less. The ratio of the lattice constant difference between the lattice constant of the first III-V compound semiconductor layer and the lattice constant of the second III-V compound semiconductor layer is not less than 0.05% and not more than 0.60%.