The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 30, 2024
Filed:
Sep. 01, 2021
Semiconductor Components Industries, Llc, Phoenix, AZ (US);
Prasad Venkatraman, Gilbert, AZ (US);
SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC, Scottsdale, AZ (US);
Abstract
A MOSFET device die includes an active area formed on a semiconductor substrate. The active area includes a first active area portion and a second active area portion. At least one mesa is formed in the semiconductor substrate extending in a longitudinal direction through the active area. The at least one mesa includes a channel region extending in a longitudinal direction. The channel region includes low threshold voltage channel portions and high threshold voltage channel portions. The first active area portion includes the channel portions in a first ratio of low threshold voltage channel portions to high threshold voltage channel portions, and the second active area portion includes channel portions in a second ratio of low threshold voltage channel portions to high threshold voltage channel portions. The first ratio is larger than the second ratio.