The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 30, 2024
Filed:
Sep. 07, 2021
Fast Sic Semiconductor Incorporated, Hsinchu, TW;
Cheng-Tyng Yen, Hsinchu, TW;
FAST SIC SEMICONDUCTOR INCORPORATED, Hsinchu, TW;
Abstract
A silicon carbide MOS-gated semiconductor device comprises a silicon carbide substrate, a drift layer, a first doped region, a second doped region, a plurality of third doped regions, a gate insulating layer, a gate electrode, an interlayer dielectric layer, and a metal layer. The gate electrode comprises a gate bus region and an active region. The active region comprises a plurality of gate electrode openings. The two adjacent gate electrode openings have a minimum width (W) which is satisfied the following formula:+2×+2×Lrepresents a channel length of channel regions, Wrepresents a minimum width of JFET regions, and Lrepresents a minimum overlapping length between the gate electrode and the second doped region.