The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 30, 2024

Filed:

Jan. 25, 2022
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Sungil Park, Suwon-si, KR;

Jae Hyun Park, Hwaseong-si, KR;

Kyungho Kim, Suwon-si, KR;

Cheoljin Yun, Yongin-si, KR;

Daewon Ha, Seoul, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/423 (2006.01); H01L 29/786 (2006.01); H01L 29/165 (2006.01); H01L 21/82 (2006.01);
U.S. Cl.
CPC ...
H01L 29/42392 (2013.01); H01L 29/78618 (2013.01); H01L 29/78696 (2013.01);
Abstract

A semiconductor device includes a lower channel pattern and an upper channel pattern stacked on a substrate in a first direction perpendicular to a top surface of the substrate, lower source/drain patterns on the substrate and at a first side and a second side of the lower channel pattern, upper source/drain patterns stacked on the lower source/drain patterns and at a third side and a fourth side of the upper channel pattern, a first barrier pattern between the lower source/drain patterns and the upper source/drain patterns, and a second barrier pattern between the first barrier pattern and the upper source/drain patterns. the first barrier pattern includes a first material and the second barrier pattern includes a second material, wherein the first material and the second material are different.


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