The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 30, 2024
Filed:
Jul. 27, 2021
Applicant:
Fuji Electric Co., Ltd., Kanagawa, JP;
Inventors:
Yasuyuki Kawada, Matsumoto, JP;
Aki Takigawa, Hachioji, JP;
Assignee:
FUJI ELECTRIC CO., LTD., Kanagawa, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/04 (2006.01); H01L 29/26 (2006.01); H01L 29/78 (2006.01); H01L 21/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/263 (2013.01); H01L 22/12 (2013.01); H01L 29/04 (2013.01); H01L 29/7813 (2013.01);
Abstract
The silicon carbide semiconductor device includes: a silicon carbide layer; a silicon dioxide layer provided above the silicon carbide layer and containing nitrogen; and a transition region arranged between the silicon carbide layer and the silicon dioxide layer, and containing carbon, oxygen, and nitrogen, wherein the maximum nitrogen concentration in the transition region is 1.0×10cmor higher. The maximum nitrogen concentration in the transition region is five or more times higher than the maximum nitrogen concentration in the silicon dioxide layer.