The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 30, 2024
Filed:
Sep. 07, 2021
Samsung Electronics Co., Ltd., Suwon-si, KR;
Minhee Choi, Suwon-si, KR;
Seojin Jeong, Incheon, KR;
Seokhoon Kim, Suwon-si, KR;
Jungtaek Kim, Yongin-si, KR;
Pankwi Park, Incheon, KR;
Moonseung Yang, Hwaseong-si, KR;
Ryong Ha, Seoul, KR;
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;
Abstract
An integrated circuit device includes a fin-type active region on a substrate; at least one nanosheet having a bottom surface facing the fin top; a gate line on the fin-type active region; and a source/drain region on the fin-type active region, adjacent to the gate line, and in contact with the at least one nanosheet, wherein the source/drain region includes a lower main body layer and an upper main body layer, a top surface of the lower main body layer includes a lower facet declining toward the substrate as it extends in a direction from the at least one nanosheet to a center of the source/drain region, and the upper main body layer includes a bottom surface contacting the lower facet and a top surface having an upper facet. With respect to a vertical cross section, the lower facet extends along a corresponding first line and the upper facet extends along a second line that intersects the first line.