The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 30, 2024

Filed:

Feb. 07, 2020
Applicant:

Sony Semiconductor Solutions Corporation, Kanagawa, JP;

Inventors:

Chihiro Tomita, Kanagawa, JP;

Shintaro Okamoto, Kanagawa, JP;

Tomohiro Hirai, Kanagawa, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H04N 25/75 (2023.01); H04N 25/79 (2023.01); H01L 21/62 (2006.01); H01L 27/146 (2006.01); H01L 29/78 (2006.01); H01L 49/02 (2006.01);
U.S. Cl.
CPC ...
H01L 28/60 (2013.01); H04N 25/75 (2023.01); H04N 25/79 (2023.01); H01L 21/62 (2013.01); H01L 27/14609 (2013.01); H01L 29/78 (2013.01);
Abstract

The present disclosure relates to a semiconductor device, a solid-state imaging device, and a method for manufacturing a semiconductor device capable of improving the voltage dependency of a gate capacitance type. Provided is a semiconductor device having a laminated structure in which a compound layer formed on a surface of a semiconductor layer and formed by the semiconductor layer reacting with metal, an insulating film layer in contact with the compound layer, and an electrode layer formed on the insulating film layer are laminated. The present technology can be applied, for example, to an analog-to-digital (AD) conversion part included in the solid-state imaging device.


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