The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 30, 2024

Filed:

Jan. 15, 2020
Applicant:

Nippon Telegraph and Telephone Corporation, Tokyo, JP;

Inventor:

Kotaro Takeda, Musashino, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/144 (2006.01); H01L 31/0232 (2014.01); H01L 31/024 (2014.01); H01L 31/028 (2006.01); H01L 31/103 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1443 (2013.01); H01L 31/024 (2013.01); H01L 31/028 (2013.01); H01L 31/02327 (2013.01); H01L 31/103 (2013.01);
Abstract

In a photodetector using GePDs, a photodetector having small change in light sensitivity due to temperature is provided. A photodetector includes a plurality of photodiodes formed on a silicon substrate and having germanium or a germanium compound in a light absorption layer, and two chips of integrated circuits arranged parallel to two sides connected to one corner of the silicon substrate, respectively, the two integrated circuits are connected to photodiodes formed on the silicon substrate, two or more of the photodiodes are arranged equidistantly from the integrated circuit that is parallel to one side connected to the one corner, and the numbers of equidistantly arranged photodiodes are equal, when viewed from the integrated circuits.


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