The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 30, 2024
Filed:
Oct. 01, 2020
Applicant:
Semiconductor Components Industries, Llc, Phoenix, AZ (US);
Inventor:
Yupeng Chen, San Jose, CA (US);
Assignee:
SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC, Scottsdale, AZ (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/02 (2006.01); H01L 27/06 (2006.01); H01L 27/07 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0262 (2013.01); H01L 27/0259 (2013.01); H01L 27/067 (2013.01); H01L 27/0722 (2013.01);
Abstract
In a general aspect, an apparatus can include a semiconductor layer of a first conductivity type and a lateral bipolar device disposed in the semiconductor layer. The apparatus can further include an isolation trench disposed in the semiconductor layer in a base region of the lateral bipolar device. The isolation trench can be disposed between an emitter implant of the lateral bipolar device and a collector implant of the lateral bipolar device. The emitter implant and the collector implant can be of a second conductivity type, opposite the first conductivity type.