The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 30, 2024
Filed:
Nov. 18, 2021
Samsung Electronics Co., Ltd., Suwon-si, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
A three-dimensional semiconductor memory device may include a first substrate including a cell array region and a cell array contact region, a peripheral circuit structure on the first substrate, and a cell array structure. The cell array structure may include a stack on the peripheral circuit structure, first vertical channel structures and second vertical channel structures on the cell array region and penetrating the stack, and a second substrate connected to the first vertical channel structures and second vertical channel structures. The stack may be between the peripheral circuit structure and the second substrate. The second substrate may include a first portion and a second portion. The first portion may contact the first vertical channel structures and may be doped a first conductivity type. The second portion may contact the second vertical channel structures and may be doped a second conductivity type different from the first conductivity type.