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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11887858 B1

PDFFull Text
Date of Patent:
Jan. 30, 2024

Filed:

Apr. 20, 2022

Semiconductor device and method of manufacturing same

Applicants:

Kabushiki Kaisha Toshiba, Tokyo, JP;

Toshiba Electronic Devices & Storage Corporation, Tokyo, JP;

Inventors:

Shinji Nunotani, Kanazawa, JP;

Shinji Onzuka, Nonoichi, JP;

Assignees:

KABUSHIKI KAISHA TOSHIBA, Tokyo, JP;

TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION, Tokyo, JP;

Attorney:

Allen & Overy LLP

Primary Examiner:

Eduardo A Rodela

Int. Cl.
CPC ...
H01L 21/78 (2006.01); H01L 21/304 (2006.01); H01L 21/784 (2006.01); H01L 21/268 (2006.01); H01L 21/306 (2006.01); H01L 21/3065 (2006.01); H01L 29/417 (2006.01); H01L 29/868 (2006.01); H01L 29/872 (2006.01); H01L 21/265 (2006.01); H01L 29/45 (2006.01); H01L 29/78 (2006.01); H01L 29/739 (2006.01); H01L 21/683 (2006.01); H01L 21/283 (2006.01); H01L 29/861 (2006.01); H01L 29/41 (2006.01); H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
H01L 21/3043 (2013.01); H01L 21/268 (2013.01); H01L 21/26513 (2013.01); H01L 21/283 (2013.01); H01L 21/3065 (2013.01); H01L 21/30604 (2013.01); H01L 21/6835 (2013.01); H01L 21/78 (2013.01); H01L 21/784 (2013.01); H01L 29/0657 (2013.01); H01L 29/41 (2013.01); H01L 29/417 (2013.01); H01L 29/45 (2013.01); H01L 29/7397 (2013.01); H01L 29/7813 (2013.01); H01L 29/861 (2013.01); H01L 29/868 (2013.01); H01L 29/872 (2013.01); H01L 2221/68327 (2013.01);
Abstract

A semiconductor device includes a semiconductor part, first and second electrodes. The semiconductor part is provided between the first and second electrodes. A method of manufacturing the device includes forming the first electrode covering a back surface of a wafer after the second electrode is formed on a front surface of the wafer; forming a first groove by selectively removing the first electrode; and dividing the wafer by forming a second groove at the front surface side. The wafer includes a region to be the semiconductor part; and the first and second grooves are provided along a periphery of the region. The first groove is in communication with the first groove. The second groove has a width in a direction along the front surface of the wafer, the width of the first groove being narrower than a width of the first groove in the same direction.

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