The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 30, 2024
Filed:
Feb. 28, 2020
Applicant:
Lam Research Corporation, Fremont, CA (US);
Inventors:
Akhil Singhal, Beaverton, OR (US);
Patrick Van Cleemput, San Jose, CA (US);
Assignee:
Lam Research Corporation, Fremont, CA (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 21/033 (2006.01); C23C 16/455 (2006.01); C23C 16/40 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0228 (2013.01); C23C 16/407 (2013.01); C23C 16/45544 (2013.01); C23C 16/45565 (2013.01); H01L 21/0234 (2013.01); H01L 21/02175 (2013.01); H01L 21/02274 (2013.01); H01L 21/0338 (2013.01);
Abstract
An Atomic Layer Deposition (ALD) method to deposit a metal oxide layer onto an organic photoresist on a substrate using a highly reactive organic metal precursor. The deposition method protects the organic photoresist from loss and degradation from exposure to oxygen species during subsequent ALD cycles. The organic metal precursor may be an amino type precursor or a methoxy type precursor.