The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 30, 2024
Filed:
Jun. 24, 2021
University of Florida Research Foundation, Incorporated, Gainesville, FL (US);
Washington University, St. Louis, MO (US);
Yier Jin, Gainesville, FL (US);
Yichen Jiang, Gainesville, FL (US);
Xuan Zhang, St. Louis, MO (US);
Huifeng Zhu, St. Louis, MO (US);
Xiaolong Guo, Gainesville, FL (US);
University of Florida Research Foundation, Incorporated, Gainesville, FL (US);
Washington University, St. Louis, MI (US);
Abstract
Embodiments provide for predicting rowhammer attack vulnerability of one or more memory cells of a direct random access memory (DRAM) chip, the DRAM chip including a plurality of memory cells. An example method, determines, for each memory cell of a subset of memory cells of the plurality of memory cells, a leakage time t, a resistance of intrinsic leakage Rbased at least in part on the leakage time t, an activation time of an adjacent aggressor row to flip a bit in the memory cell, a resistance of coupling leaking Rbased at least in part on the activation time, and a toggling count. The method identifies, based at least in part on one or more of the R, R, or toggling count, whether the direct random memory access (DRAM) chip is vulnerable to a rowhammer attack.