The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 30, 2024

Filed:

Sep. 29, 2021
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Haedong No, Hwaseong-si, KR;

Youjin Jeon, Yongin-si, KR;

Hyeji Yun, Hwaseong-si, KR;

Jongtaek Seong, Hwaseong-si, KR;

Jungeol Baek, Seoul, KR;

Youn-Soo Cheon, Hwaseong-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/26 (2006.01); G11C 29/42 (2006.01); G11C 29/44 (2006.01); G11C 16/34 (2006.01); G06N 20/00 (2019.01); G11C 16/30 (2006.01); G11C 16/10 (2006.01);
U.S. Cl.
CPC ...
G11C 29/42 (2013.01); G06N 20/00 (2019.01); G11C 16/102 (2013.01); G11C 16/26 (2013.01); G11C 16/30 (2013.01); G11C 16/3404 (2013.01); G11C 16/3495 (2013.01); G11C 29/4401 (2013.01);
Abstract

A storage device includes a nonvolatile memory device and a memory controller. An operating method of the storage device includes sending, at the memory controller, a first read command and first offset information to the nonvolatile memory device, performing, at the nonvolatile memory device, first read operations based on the first read command and the first offset information, sending, at the nonvolatile memory device, a result of the first read operations as first data to the memory controller, sending, at the memory controller, a second read command, read voltage levels, and second offset information to the nonvolatile memory device, performing, at the nonvolatile memory device, second read operations based on the second read command, the read level information, and the second offset information, and sending, at the nonvolatile memory device, results of the second read operations as second data to the memory controller.


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