The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 30, 2024

Filed:

Sep. 21, 2020
Applicant:

Innogrit Technologies Co., Ltd., Shanghai, CN;

Inventors:

Gang Zhao, Chandler, AZ (US);

Lin Chen, Cupertino, CA (US);

Wei Jiang, Fremont, CA (US);

Jie Chen, Milpitas, CA (US);

Tao Wei, Shanghai, CN;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G06F 11/30 (2006.01); G06F 11/07 (2006.01); G11C 7/04 (2006.01); G11C 7/14 (2006.01); G11C 16/10 (2006.01); G11C 16/26 (2006.01); G11C 16/34 (2006.01);
U.S. Cl.
CPC ...
G06F 11/3037 (2013.01); G06F 11/076 (2013.01); G06F 11/3058 (2013.01); G11C 7/04 (2013.01); G11C 7/14 (2013.01); G11C 16/10 (2013.01); G11C 16/26 (2013.01); G11C 16/3404 (2013.01); G11C 16/349 (2013.01);
Abstract

Systems, apparatus and methods are provided for temperature assisted non-volatile storage device management in a non-volatile storage system. In one embodiment, a non-volatile storage system may comprise a temperature sensor, a non-volatile storage device and a processor. The processor may be configured to obtain a read-out from the temperature sensor, generate a predicted real-time on-die temperature for the non-volatile storage device based on the read-out, generate an estimated threshold voltage for reading data stored in the non-volatile storage device based on the predicted real-time on-die temperature and conduct a local sweep of a reference voltage using the estimated threshold voltage as a starting point to obtain a final read reference voltage with a minimum read bit error rate.


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