The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 30, 2024

Filed:

Apr. 20, 2021
Applicant:

Sony Semiconductor Solutions Corporation, Kanagawa, JP;

Inventors:

Yusuke Takatsuka, Kanagawa, JP;

Yoshiki Ebiko, Kanagawa, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01S 7/48 (2006.01); G01S 7/481 (2006.01); G01S 17/32 (2020.01); G01S 7/4915 (2020.01);
U.S. Cl.
CPC ...
G01S 7/4816 (2013.01); G01S 7/4915 (2013.01); G01S 17/32 (2013.01);
Abstract

A sensor device according to the present technology includes a pixel that includes: a photoelectric conversion element that performs photoelectric conversion; a first charge holding unit and a second charge holding unit that hold charges accumulated in the photoelectric conversion element; a first transfer transistor that transfers the charges to the first charge holding unit; and a second transfer transistor that transfers the charges to the second charge holding unit. Each of the first and second transfer transistors includes a vertical transistor including a vertical gate electrode portion, and in each of the first and second transfer transistors, an oxide film thickness of an opposite side wall portion is made larger than an oxide film thickness of a transfer side wall portion, the opposite side wall portion being positioned on a side opposite to the transfer side wall portion that is a wall portion on a side facing a transfer path of the charges among side wall portions of the vertical gate electrode portion.


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