The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 30, 2024
Filed:
Oct. 10, 2017
Applicant:
Mitsubishi Electric Corporation, Tokyo, JP;
Inventor:
Hajime Sasaki, Tokyo, JP;
Assignee:
Mitsubishi Electric Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01M 3/04 (2006.01); G01N 25/56 (2006.01); G01M 3/16 (2006.01); H01L 21/66 (2006.01); H01L 21/78 (2006.01);
U.S. Cl.
CPC ...
G01M 3/047 (2013.01); G01M 3/16 (2013.01); G01N 25/56 (2013.01); H01L 21/78 (2013.01); H01L 22/26 (2013.01);
Abstract
A test method for a semiconductor device comprising a substrate wafer (), in which an element is formed and a material through which an infrared ray can be transmitted, and a package having an airtight space () between a cap wafer (), which is provided opposite to the substrate wafer (); and which includes a water applying process in which the semiconductor device is exposed to a high moisture atmosphere and a leak discrimination process in which an infrared ray from the semiconductor device is detected and a leak of the package is discriminated based on absorption of the infrared ray by water molecules.