The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 30, 2024

Filed:

May. 06, 2020
Applicant:

Cnbm Research Institute for Advanced Glass Materials Group Co., Ltd., Bengbu, CN;

Inventors:

Joerg Palm, Munich, DE;

Thomas Niesen, Deisenhofer, DE;

Erik Trabitzsch, Leipzig, DE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); C23C 14/58 (2006.01); B01D 5/00 (2006.01); C23C 14/06 (2006.01);
U.S. Cl.
CPC ...
C23C 14/5866 (2013.01); B01D 5/006 (2013.01); B01D 5/009 (2013.01); C23C 14/0623 (2013.01); H01L 21/02568 (2013.01);
Abstract

A process for producing a chalcogen-containing compound semiconductor includes providing at least one substrate coated with a precursor for the chalcogen-containing compound semiconductor in a process chamber; heat treating the at least one coated substrate in the process chamber, wherein during a heat treatment, a gas atmosphere comprising at least one gaseous chalcogen compound is provided in the process chamber; removing the gas atmosphere present after the heat treatment of the at least one coated substrate as a waste gas from the process chamber; cooling the waste gas in a gas processor, wherein a plurality of gaseous chalcogen compounds-present in the waste gas after the heat treatment of the at least one coated substrate are separated in time and space from one another from the waste gas by respective conversion into a liquid or solid form. Further provided is a device designed to carry out the process.


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