The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 30, 2024

Filed:

Sep. 20, 2019
Applicant:

Sumitomo Electric Industries, Ltd., Osaka, JP;

Inventors:

Fuminori Mitsuhashi, Osaka, JP;

Yasunori Tateno, Osaka, JP;

Masahiro Adachi, Osaka, JP;

Yoshiyuki Yamamoto, Osaka, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C01B 32/182 (2017.01); H01L 29/16 (2006.01); H01L 29/76 (2006.01);
U.S. Cl.
CPC ...
C01B 32/182 (2017.08); H01L 29/1606 (2013.01); H01L 29/7606 (2013.01); C01B 2204/04 (2013.01); C01B 2204/22 (2013.01);
Abstract

A multilayer body includes a base portion and a graphene film. In an ion mass distribution versus depth of the multilayer body determined by time-of-flight secondary ion mass spectrometry, detection intensities of Cions have a maximum value at a depth of greater than 0 nm and 2.5 nm or less from an exposed surface. Detection intensities of Cions have a maximum value at a depth of greater than 0 nm and 3.0 nm or less from the exposed surface. Detection intensities of SiCions have a maximum value at a depth of 0.5 nm or greater and 5.0 nm or less from the exposed surface. Detection intensities of SiC ions have a maximum value at a depth of 0.5 nm or greater and 10.0 nm or less from the exposed surface. Detection intensities of Siions have a maximum value at a depth of 0.5 nm or greater and 10.0 nm or less from the exposed surface. A value obtained by dividing the maximum value of the detection intensities of SiCions by an average of detection intensities of SiCions associated with a region of the multilayer body is 1 or greater and 3.5 or less, the region having distances from the exposed surface in a thickness direction of the multilayer body of equal to or greater than 8 nm and 12 nm or less.


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