The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 30, 2024
Filed:
Jul. 25, 2017
Amplitude Systemes, Pessac, FR;
Centre National DE LA Recherche Scientifique, Paris, FR;
Universite DE Bordeaux, Bordeaux, FR;
Alphanov Institut D'optique D'aquitaine, Talence, FR;
Konstantin Mishchik, Bordeaux, FR;
John Lopez, Gradignan, FR;
Rainer Kling, Cestas, FR;
Clémentine Javaux-Leger, Leognan, FR;
Guillaume Duchateau, Pessac, FR;
Ophélie Dematteo-Caulier, Ychoux, FR;
AMPLITUDE, Pessac, FR;
CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE, Paris, FR;
UNIVERSITE DE BORDEAUX, Bordeaux, FR;
ALPHANOV INSTITUT D'OPTIQUE D'AQUITAINE, Talence, FR;
Abstract
Disclosed is a method for cutting dielectric or semiconducting material with a laser. The method includes the following steps: emission of a laser beam including at least one burst of N femtoseconds laser pulses; spatial separation of the laser beam into a first split beam having a first energy, and respectively, a second split beam having a second energy; spatial concentration of energy of the first split beam in a first zone of the material, respectively, of the second split beam in a second zone of the material, the first zone and the second zone being separate and staggered by a distance dx; and adjustment of the distance between the first zone and the second zone in such a way as to initiate a straight micro-fracture oriented between the first zone and the second zone.