The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 23, 2024

Filed:

Sep. 03, 2021
Applicant:

SK Hynix Inc., Icheon, KR;

Inventors:

Ji Sun Han, Icheon, KR;

Yong Hun Sung, Icheon, KR;

Byung Jick Cho, Icheon, KR;

Assignee:

SK hynix Inc., Icheon, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10N 70/00 (2023.01); H10B 63/00 (2023.01);
U.S. Cl.
CPC ...
H10N 70/883 (2023.02); H10B 63/80 (2023.02); H10N 70/011 (2023.02); H10N 70/841 (2023.02); H10N 70/8845 (2023.02);
Abstract

An electronic device comprises a semiconductor memory that includes: a first line; a second line disposed over the first line to be spaced apart from the first line; a variable resistance layer disposed between the first line and the second line; a first electrode layer disposed between the first line and the variable resistance layer; and a first oxide layer disposed between the variable resistance layer and the first electrode layer. The first electrode layer includes a first carbon material doped with a first element, and the first oxide layer includes a first oxide of the first element.


Find Patent Forward Citations

Quick Actions:

Han, Ji. (2024). Electronic device and method for fabricating the same (U.S. Patent No. 11882775). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11882775

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