The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 23, 2024
Filed:
Nov. 19, 2019
Flexterra, Inc., Skokie, IL (US);
Antonio Facchetti, Skokie, IL (US);
Yu Xia, Skokie, IL (US);
Zhihua Chen, Skokie, IL (US);
Timothy Chiu, Skokieil, IL (US);
Shaofeng Lu, Skokie, IL (US);
Flexterra, Inc., Skokie, IL (US);
Abstract
This invention relates to a thin-film transistor including, a dielectric layer having a first side and an opposed second side; a source electrode, a drain electrode separated from the source electrode, and a semiconductor component disposed between and in contact with the source electrode and the drain electrode, the source electrode, the drain electrode and the semiconductor component being disposed adjacent the first side of the dielectric layer; and a gate electrode disposed adjacent the second side of the dielectric layer opposite the semiconductor component; wherein the semiconductor component comprises one or more n-type organic semiconductor materials based on arene-bis(dicarboximide)s, and wherein the thin-film transistor has a channel length, measured as the shortest path from the source electrode to the drain electrode, of no more than 20 μm.