The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 23, 2024
Filed:
Jul. 15, 2021
SK Hynix Inc., Icheon-si, KR;
Sungmook Lim, Icheon-si, KR;
Dae Hwan Yun, Icheon-si, KR;
Gil Bok Choi, Icheon-si, KR;
Jae Hyeon Shin, Icheon-si, KR;
In Gon Yang, Icheon-si, KR;
Hyung Jin Choi, Icheon-si, KR;
SK hynix Inc., Icheon-si, KR;
Abstract
Provided herein may be a semiconductor memory device and a method of manufacturing the semiconductor memory device. The semiconductor memory device may include a stacked body including a plurality of interlayer insulating layers and a plurality of gate electrodes that are alternately stacked on a substrate, and a plurality of channel structures configured to vertically pass through the stacked body. Each of the plurality of channel structures may include a core insulating layer, a first channel layer, a second channel layer, a tunnel insulating layer, and a charge storage layer that extend vertically towards the substrate. Electron mobility of the first channel layer may be higher than electron mobility of the second channel layer.