The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 23, 2024
Filed:
Jul. 06, 2021
Samsung Electronics Co., Ltd., Suwon-si, KR;
Kyungsun Ryu, Hwaseong-si, KR;
Duckhee Lee, Busan, KR;
Junwon Lee, Asan-si, KR;
Younseok Choi, Seoul, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
A semiconductor device includes an active pattern on a substrate, a gate structure buried at an upper portion of the active pattern, a bit line structure on the active pattern, a spacer structure on a sidewall of the bit line structure, a contact plug structure contacting the spacer structure, an insulating interlayer structure partially penetrating through upper portions of the contact plug structure, the spacer structure and the bit line structure, and a capacitor on the contact plug structure. The spacer structure includes an air spacer including air. The insulating interlayer structure includes first and second insulating interlayers. The second insulating interlayer may include an insulation material different from that of the first insulating interlayer. A lower surface of the second insulating interlayer covers a top of the air spacer, and a lowermost surface of the first insulating interlayer is covered by the second insulating interlayer.