The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 23, 2024
Filed:
Nov. 09, 2020
Nissan Motor Co., Ltd., Kanagawa, JP;
Renault S.a.s., Boulogne-Billancourt, FR;
Toshiharu Marui, Kanagawa, JP;
Tetsuya Hayashi, Kanagawa, JP;
Keiichiro Numakura, Kanagawa, JP;
Wei Ni, Kanagawa, JP;
Ryota Tanaka, Kanagawa, JP;
Yuichi Iwasaki, Kanagawa, JP;
Nissan Motor Co., Ltd., Kanagawa, JP;
RENAULT S.A.S., Boulogne-Billancourt, FR;
Abstract
A semiconductor device includes: a substrate; a source region formed on a main surface of the substrate; a well region electrically connected to the source region; a drift region in contact with the well region; a drain region in contact with the drift region; a first electrode electrically connected to the source region; a second electrode electrically connected to the drain region; a third electrode formed in contact with the source region, the well region, and the drift region through an insulating film; and a parasitic capacitance reduction region formed in contact with the source region and in contact with the third electrode through the insulating film and having a higher resistance value than that of the source region.