The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 23, 2024

Filed:

May. 12, 2021
Applicant:

Solsona Enterprise, Llc, San Diego, CA (US);

Inventor:

Chong Uk Lee, Carlsbad, CA (US);

Assignee:

Solsona Enterprise, LLC, San Diego, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/423 (2006.01); H01L 29/786 (2006.01); H01L 29/417 (2006.01);
U.S. Cl.
CPC ...
H01L 29/4238 (2013.01); H01L 29/41733 (2013.01); H01L 29/41741 (2013.01); H01L 29/41775 (2013.01); H01L 29/42356 (2013.01); H01L 29/42376 (2013.01); H01L 29/42384 (2013.01); H01L 29/78642 (2013.01); H01L 29/78645 (2013.01); H01L 29/78648 (2013.01); H01L 29/78696 (2013.01); H01L 2029/42388 (2013.01);
Abstract

The present invention provides a vertical-type thin film transistor (TFT). The vertical TFT may comprise a source electrode and a drain electrode extending parallel to each other, with a semiconductor layer arranged in between the source electrode and the drain electrode. A single gate electrode may be embedded in the semiconductor layer, the single gate electrode comprising micro-perforations configured to control the flow of electrons therethrough in dependence on a predetermined voltage difference between the source electrode and the single gate electrode. The gate electrode masks a direct electric field between the source electrode and the drain electrode. A rate of flow of electrons through the perforations is increased with an increase in the predetermined voltage.


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