The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 23, 2024

Filed:

Jul. 28, 2021
Applicant:

Samsung Display Co., Ltd., Yongin-si, KR;

Inventors:

Han Bit Kim, Seoul, KR;

Mee Jae Kang, Suwon-si, KR;

Keun Woo Kim, Seongnam-si, KR;

Doo-Na Kim, Seongnam-si, KR;

Sang Sub Kim, Suwon-si, KR;

Do Kyeong Lee, Yongin-si, KR;

Jae Hwan Chu, Hwaseong-si, KR;

Assignee:

SAMSUNG DISPLAY CO., LTD., Gyeonggi-Do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/12 (2006.01); H01L 27/15 (2006.01); H10K 59/121 (2023.01);
U.S. Cl.
CPC ...
H01L 27/1222 (2013.01); H01L 27/124 (2013.01); H01L 27/156 (2013.01); H10K 59/1213 (2023.02);
Abstract

A display device includes a substrate, a semiconductor layer disposed on the substrate, and including a first channel portion, a second channel portion, a connecting portion disposed between the first channel portion and the second channel portion, and electrode regions, a first insulating layer disposed on the semiconductor layer, a gate conductor disposed on the first insulating layer and including a first gate electrode overlapping the first channel portion and a second gate electrode overlapping the second channel portion, signal lines disposed on the substrate, a first electrode electrically connected to at least one of electrode regions of the semiconductor layer, an emission layer disposed on the first electrode, and a second electrode disposed on the emission layer, and the first channel portion and the second channel portion of the semiconductor layer each have a first width greater than a second width of the connecting portion.


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