The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 23, 2024

Filed:

May. 24, 2022
Applicant:

Semtech Corporation, Camarillo, CA (US);

Inventors:

Changjun Huang, Oak Park, CA (US);

Jonathan Clark, Camarillo, CA (US);

Assignee:

Semtech Corporation, Camarillo, CA (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 25/00 (2006.01); H01L 23/60 (2006.01); H01L 23/495 (2006.01); H01L 27/02 (2006.01); H01L 23/00 (2006.01); H01L 21/768 (2006.01); H01L 25/065 (2023.01); H01L 23/29 (2006.01); H01L 21/56 (2006.01); H01L 23/31 (2006.01); H01L 21/304 (2006.01); H01L 21/78 (2006.01);
U.S. Cl.
CPC ...
H01L 25/50 (2013.01); H01L 21/76898 (2013.01); H01L 23/49575 (2013.01); H01L 23/60 (2013.01); H01L 24/13 (2013.01); H01L 24/14 (2013.01); H01L 24/16 (2013.01); H01L 24/81 (2013.01); H01L 24/94 (2013.01); H01L 24/97 (2013.01); H01L 25/0657 (2013.01); H01L 21/304 (2013.01); H01L 21/561 (2013.01); H01L 21/78 (2013.01); H01L 23/295 (2013.01); H01L 23/3121 (2013.01); H01L 23/3171 (2013.01); H01L 24/03 (2013.01); H01L 24/05 (2013.01); H01L 24/11 (2013.01); H01L 24/17 (2013.01); H01L 24/29 (2013.01); H01L 24/32 (2013.01); H01L 24/45 (2013.01); H01L 24/48 (2013.01); H01L 24/73 (2013.01); H01L 24/80 (2013.01); H01L 24/85 (2013.01); H01L 27/0255 (2013.01); H01L 2224/0345 (2013.01); H01L 2224/03452 (2013.01); H01L 2224/03462 (2013.01); H01L 2224/03464 (2013.01); H01L 2224/0401 (2013.01); H01L 2224/04042 (2013.01); H01L 2224/05009 (2013.01); H01L 2224/0557 (2013.01); H01L 2224/0558 (2013.01); H01L 2224/05548 (2013.01); H01L 2224/05568 (2013.01); H01L 2224/05571 (2013.01); H01L 2224/05573 (2013.01); H01L 2224/05611 (2013.01); H01L 2224/05624 (2013.01); H01L 2224/05639 (2013.01); H01L 2224/05644 (2013.01); H01L 2224/05647 (2013.01); H01L 2224/05655 (2013.01); H01L 2224/06181 (2013.01); H01L 2224/08146 (2013.01); H01L 2224/08148 (2013.01); H01L 2224/1132 (2013.01); H01L 2224/1134 (2013.01); H01L 2224/1145 (2013.01); H01L 2224/11334 (2013.01); H01L 2224/11462 (2013.01); H01L 2224/11464 (2013.01); H01L 2224/11849 (2013.01); H01L 2224/11901 (2013.01); H01L 2224/13025 (2013.01); H01L 2224/13111 (2013.01); H01L 2224/13113 (2013.01); H01L 2224/13116 (2013.01); H01L 2224/13124 (2013.01); H01L 2224/13139 (2013.01); H01L 2224/13144 (2013.01); H01L 2224/13147 (2013.01); H01L 2224/13155 (2013.01); H01L 2224/14181 (2013.01); H01L 2224/16146 (2013.01); H01L 2224/16147 (2013.01); H01L 2224/16227 (2013.01); H01L 2224/16245 (2013.01); H01L 2224/17181 (2013.01); H01L 2224/2929 (2013.01); H01L 2224/32145 (2013.01); H01L 2224/32245 (2013.01); H01L 2224/45124 (2013.01); H01L 2224/45139 (2013.01); H01L 2224/45144 (2013.01); H01L 2224/45147 (2013.01); H01L 2224/4847 (2013.01); H01L 2224/48091 (2013.01); H01L 2224/48145 (2013.01); H01L 2224/48247 (2013.01); H01L 2224/48463 (2013.01); H01L 2224/48465 (2013.01); H01L 2224/73253 (2013.01); H01L 2224/73257 (2013.01); H01L 2224/8082 (2013.01); H01L 2224/80203 (2013.01); H01L 2224/80895 (2013.01); H01L 2224/8182 (2013.01); H01L 2224/81203 (2013.01); H01L 2224/81815 (2013.01); H01L 2224/85203 (2013.01); H01L 2224/85205 (2013.01); H01L 2224/94 (2013.01); H01L 2224/97 (2013.01); H01L 2225/0651 (2013.01); H01L 2225/06513 (2013.01); H01L 2225/06517 (2013.01); H01L 2225/06541 (2013.01); H01L 2225/06565 (2013.01); H01L 2924/1033 (2013.01); H01L 2924/10252 (2013.01); H01L 2924/10253 (2013.01); H01L 2924/10272 (2013.01); H01L 2924/10322 (2013.01); H01L 2924/10324 (2013.01); H01L 2924/10329 (2013.01); H01L 2924/10335 (2013.01); H01L 2924/1203 (2013.01); H01L 2924/13091 (2013.01); H01L 2924/141 (2013.01); H01L 2924/143 (2013.01); H01L 2924/1433 (2013.01); H01L 2924/1434 (2013.01); H01L 2924/1461 (2013.01);
Abstract

A semiconductor device has a first semiconductor die including a first protection circuit. A second semiconductor die including a second protection circuit is disposed over the first semiconductor die. A portion of the first semiconductor die and second semiconductor die is removed to reduce die thickness. An interconnect structure is formed to commonly connect the first protection circuit and second protection circuit. A transient condition incident to the interconnect structure is collectively discharged through the first protection circuit and second protection circuit. Any number of semiconductor die with protection circuits can be stacked and interconnected via the interconnect structure to increase the ESD current discharge capability. The die stacking can be achieved by disposing a first semiconductor wafer over a second semiconductor wafer and then singulating the wafers. Alternatively, die-to-wafer or die-to-die assembly is used.


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