The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 23, 2024
Filed:
Sep. 28, 2020
Applicant:
Texas Instruments Incorporated, Dallas, TX (US);
Inventor:
Honglin Guo, Dallas, TX (US);
Assignee:
Texas Instruments Incorporated, Dallas, TX (US);
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/64 (2006.01); H01L 27/08 (2006.01); H01L 23/522 (2006.01); H01L 21/82 (2006.01); H01L 27/01 (2006.01);
U.S. Cl.
CPC ...
H01L 23/642 (2013.01); H01L 21/82 (2013.01); H01L 23/5223 (2013.01); H01L 27/01 (2013.01); H01L 27/0805 (2013.01);
Abstract
A semiconductor device includes an impedance having a first port and a second port located over a semiconductor substrate. The impedance includes at least one metal-insulator-metal (MIM) lateral flux capacitor (LFC) pair. Each LFC pair includes a first LFC connected in series with a second LFC. A terminal of the first LFC is connected to the first port, and a terminal of the second LFC is connected to the second port. Optionally the device further includes circuitry formed over the semiconductor substrate, wherein the circuitry is configured to implement a circuit function in cooperation with the impedance.