The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 23, 2024

Filed:

Dec. 16, 2019
Applicant:

Shindengen Electric Manufacturing Co., Ltd., Tokyo, JP;

Inventors:

Soichiro Umeda, Saitama, JP;

Atsushi Kyutoku, Saitama, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/495 (2006.01); H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H01L 23/49544 (2013.01); H01L 23/49531 (2013.01); H01L 23/49551 (2013.01); H01L 24/32 (2013.01); H01L 2224/32245 (2013.01); H01L 2924/351 (2013.01);
Abstract

A semiconductor device according to the present invention includes: a circuit board; a semiconductor element having a main electrode; a metal frame; and a metal plate having a flat plate shape, the metal plate being disposed between the metal frame and the main electrode, wherein the metal plate and a conductive bonding material, form a stress relaxation structure which relaxes a stress applied to metal plate and the conductive bonding material, disposed between the metal frame and the semiconductor element, and the stress relaxation structure is configured such that a thickness of the metal plate is smaller than a thickness of the metal frame, and at least one convex portion is formed on the metal plate at a position which corresponds to the main electrode. The semiconductor device according to the present invention can relax a stress applied to a conductive bonding material between a semiconductor element and a metal frame even when a relatively thick metal frame is used.


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