The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 23, 2024
Filed:
Feb. 10, 2021
Applicant:
Qromis, Inc., Santa Clara, CA (US);
Inventors:
Ozgur Aktas, Pleasanton, CA (US);
Vladimir Odnoblyudov, Danville, CA (US);
Cem Basceri, Los Gatos, CA (US);
Assignee:
QROMIS, INC., Santa Clara, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/225 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 21/2258 (2013.01); H01L 21/02057 (2013.01);
Abstract
A method of forming a doped gallium nitride (GaN) layer includes providing a substrate structure, including a gallium nitride layer, forming a dopant source layer over the gallium nitride layer, and depositing a capping structure over the dopant source layer. The method also includes annealing the substrate structure to diffuse dopants into the gallium nitride layer, removing the capping structure and the dopant source layer, and activating the diffused dopants.