The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 23, 2024
Filed:
Jan. 08, 2020
Applicant:
Screen Holdings Co., Ltd., Kyoto, JP;
Inventors:
Ayumi Higuchi, Kyoto, JP;
Yuya Akanishi, Kyoto, JP;
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/033 (2006.01); H01L 21/268 (2006.01); H01L 21/3065 (2006.01); H01L 21/67 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0337 (2013.01); H01L 21/2686 (2013.01); H01L 21/3065 (2013.01); H01L 21/6708 (2013.01);
Abstract
A substrate processing method includes an operation for holding a substrate in a horizontal position, the substrate including an amorphous silicon layer having a surface on which an altered layer derived from dry etching is formed, an operation for irradiating the altered layer with ultraviolet rays to reform the altered layer into a reformed layer, and an operation for supplying a chemical solution to the amorphous silicon layer having the reformed layer on the surface to perform wet etching on the amorphous silicon layer. This improves the efficiency of the wet etching on the amorphous silicon layer.