The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 23, 2024
Filed:
Oct. 20, 2022
Applicant:
Ionq, Inc., College Park, MD (US);
Inventors:
Shantanu Debnath, Lanham, MD (US);
Vandiver Chaplin, Brooklyn, NY (US);
Assignee:
IonQ, Inc., College Park, MD (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01J 3/44 (2006.01); G01N 21/65 (2006.01); G06N 10/40 (2022.01);
U.S. Cl.
CPC ...
G01N 21/65 (2013.01); G06N 10/40 (2022.01);
Abstract
Aspects of the present disclosure relate generally to systems and methods for use in the implementation and/or operation of quantum information processing (QIP) systems, and more particularly, to the correction of light-shift effects in trapped-ion quantum gates. Techniques are described for light-shift correction of single qubit gates when the gates are implemented using counter-propagating Raman laser beams and when the gates are implemented using co-propagating Raman laser beams. Moreover, techniques are also described for light-shift correction of two-qubit gates.