The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 23, 2024

Filed:

Aug. 14, 2020
Applicant:

Massachusetts Institute of Technology, Cambridge, MA (US);

Inventors:

Youwei Yao, Waltham, MA (US);

Brandon Chalifoux, Willimantic, CT (US);

Mark Schattenburg, Framingham, MA (US);

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C23C 16/44 (2006.01); C23C 18/16 (2006.01); H01L 21/02 (2006.01); G21K 1/06 (2006.01);
U.S. Cl.
CPC ...
C23C 16/4407 (2013.01); C23C 18/1607 (2013.01); G21K 1/067 (2013.01); H01L 21/02123 (2013.01); G21K 2201/064 (2013.01); G21K 2201/067 (2013.01); H01L 21/02002 (2013.01);
Abstract

A device includes a substrate and a stressed layer disposed on a first surface of the substrate. The stressed layer includes: a first set of patterns having a predetermined geometry, size, and arrangement selected to control an equibiaxial stress field of the stressed layer, wherein the equibiaxial stress field varies in magnitude over the first surface of the substrate, and a second set of patterns etched into the first set of patterns and the substrate, the second set of patterns comprising a plurality of substantially parallel lines arranged to control at least a uniaxial stress field of the stressed layer, wherein the uniaxial stress field varies in magnitude over the first surface of the substrate.


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